The Radeon HD 6970 uses eight 2 Gbit GDDR5 chips, making its 2 GB video memory (2 Gbit x 8 = 2 GB). Each chip is connected to the GPU using a 32-bit data lane, making the video card’s 256-bit.
FDD16AN08_F085 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
AON6978 Datasheet (PDF) 0.1. Aon6978.pdf Size:476K aosemi. AON697830V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 28A 36A Low Gate Charge RDS(ON) (at VGS=10V). Mosfet AON6970 AO6970 6970FET CHIP IC For control power Regulator Buy From Sparesale.com Direct Importer And Distributor in india. AON6970 Symbol Min Typ Max Units BV DSS 30 V VDS =30V, V GS =0V 1 TJ=55°C 5 IGSS ±100 nA VGS(th) Gate Threshold Voltage 1.3 1.8 2.3 V 4.4 5.4 TJ=125°C 6.8 8.3 6.7 8.5 mΩ gFS 80 S VSD 0.7 1 V IS 35 A Ciss 1171 pF Coss 284 pF Crss 59 pF Rg 0.3 0.6 0.9 Ω Qg(10V) 17 23 nC Qg(4.5V) 8 11 nC Qgs 4.7 nC Qgd 2 nC tD(on) 6.5 ns tr 15.5 ns t 17 ns VGS =0V, V DS =15V, f=1MHz SWITCHING.
Наименование прибора: FDD16AN08_F085
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 135 W
Предельно допустимое напряжение сток-исток |Uds|: 75 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 50 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 31 nC
Сопротивление сток-исток открытого транзистора (Rds): 0.016 Ohm
Тип корпуса: TO252
FDD16AN08_F085 Datasheet (PDF)
0.1. fdd16an08a0 f085 fdd16an08 f085.pdf Size:2944K _fairchild_semi
October 2008FDD16AN08A0_F085N-Channel UltraFET Trench MOSFET75V, 50A, 16mFeatures Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 50A 42V Automotive Load Control Qg(tot) = 31nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capabil
5.1. fdd16an08a0.pdf Size:242K _fairchild_semi
May 2002FDD16AN08A0N-Channel UltraFET Trench MOSFET75V, 50A, 16mFeatures Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 50A 42V Automotive Load Control Qg(tot) = 31nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capability (Sing
5.2. fdd16an08a0 nf054.pdf Size:239K _fairchild_semi
May 2002FDD16AN08A0N-Channel UltraFET Trench MOSFET75V, 50A, 16mFeatures Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 50A 42V Automotive Load Control Qg(tot) = 31nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capability (Sing
Другие MOSFET... FDH50N50, FQPF6N90C, FQPF70N10, FDH45N50F, FQPF7N60, FDN5632N_F085, FQPF7N65C, FQPF7N80C, BUZ10, FQPF7P20, FQPF85N06, FQPF8N60C, FDD24AN06L_F085, FQPF8N60CF, FDMS7680, FQPF8N80C, FQD5N15.